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| Power Transistors www.jmnic.com 2SC2334 Silicon NPN Transistors Features (c)q (c)q (c)q With TO-220 package Complement to type 2SA1010 For high speed switching industrial use BCE Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO ICP IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature RATING 150 100 7 15 7 40 150 -55~150 UNIT V V V A A W TO-220 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO ICEO VCBO V(BR)ceo VEBO VCE(sat-1) VCE(sat-2) hFE-1 hFE-2 hFE-3 VBE(sat)1 ton tstg tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Base-emitter saturation voltages Turn-on time Storage time Fall time IC=3A; VCE=5V IC=0.5A; VCE=5V IC=5A; VCE=5V IC=5A; IB=0.5A VCC=50V IC=5A IB1=-IB2=0.5A RL=50 40 40 20 1.5 0.5 0.5 1.5 V s s s 240 IC=5A; IB=0.5A 0.6 V IC=200mA; IB=0 100 V CONDITIONS VCB=100V; IE=0 VEB=5V; IC=0 MIN TYP MAX 10 10 UNIT A A hFE-2 classification R 40-80 O 70-140 Y 120-240 JMnic |
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